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| 622 Mbit/s Transimpedance Amplifier Preliminary Data FOA1061A1 FOA1062A1 Bipolar IC Features * * * * Data rate up to 622 Mbit/s Input sensitivity -31.0 dBm at BER = 10 -9 High overload: 2 mApp maximum input current Single supply voltage: + 4.5 V to + 5.5 V P-TSSOP-16-1 * Internal DC-compensation loop increases dynamic range * No external components needed * Internal bias generation for PIN-photodiode * Internal low-pass filter to improve power supply rejection * Operates with PIN- or APD-photodiode * Monitor output for mirrored photodiode current Applications * Fibre optics data communication systems * SONET OC-12, SDH STM-4 * Pre-amplifier modules Type FOA1061A1 FOA1062A1 Semiconductor Group Ordering Code Q67000-H4129 Q67000-H4130 1 Package P-TSSOP-16-1 bare die July 1998 FOA1061A1 FOA1062A1 0.5 k FILTER Vref = 4.2 V 6.0 k FOA1061A1 FOA1062A1 VCC GND 60 IN -40 +4.0 +9.2 60 Q+ Q- DC compensation Vref MONITOR s Figure 1 Block diagram. Table 1 Symbol Pin Description Function Supply voltage Data input from PIN- or APD-photodiode Non-inverting data output Inverting data output Bias voltage for PIN-diode Mirrored photodiode current (connect pin via 0 ... 2 k to VCC) Ground VCC IN Q+ Q- FILTER MONITOR GND Semiconductor Group 2 July 1998 FOA1061A1 FOA1062A1 Electrical Characteristics Absolute Maximum Ratings Stresses listed below here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Ambient temperature Tamb = -40 C ... +85 C Parameter Supply voltage Junction temperature Storage temperature Relative ambient humidity ESD voltage Symbol Limit Values min. max. 6.0 125 150 85/85 -0.5 -40 -40 500 Unit V C C Remarks VCC Tj TS VESD %/C no condensation V note 1) and 2) Note: 1) Except IN-pin 2) HBM according to MIL STD 883D, method 3015.7 and ESD Assn. Standard S5.1-1993. Recommended Operating Conditions Ambient temperature Tamb = -40 C ... +85 C Parameter Supply voltage Data transmission rate Supply current Thermal resistance Junction temperature Symbol Limit Values min. typ. +5.0 622 45 140 -10 +125 max. +5.5 +4.5 Unit V Mbit/s mA K/W C Remarks VCC ICC JA see note 1) see note 2) Tj Note: 1) Junction-to-ambient thermal resistance measurement conditions for packaged device: PCB area: 10 cm x 10 cm x 1.5 mm; copper area approx. 60 %; via holes to ground layer underneath the device; all pins soldered. 2) Do not exceed the maximum junction temperature. If used as packaged version, provide sufficient PCB heat sink to the device by soldering all pins and sufficient copper area underneath the chip (see note 1). Semiconductor Group 3 July 1998 FOA1061A1 FOA1062A1 AC/DC Characteristics Conditions: Tamb = +25 C, VCC = +5.0 V, Cexternal = 0.85 pF Parameter Supply current Input voltage Input current Input current before clipping Input resistance Input sensitivity Optical overload Transimpedance Output voltage swing (Q+ - Q-) Bandwidth (-3 dB) Output resistance Output voltage Output pattern jitter (Note 1) Symbol Limit Values min. typ. 45 +1.65 2000 8 max. 54 Unit mA V Remarks IVCC VIN IIN IIN,CL App (Note 1) App RIN PIN POVL RT VOUT 0.6 150 -31.0 0 96 0.78 450 48 60 72 1.1 dBm BER < 10 -9 (Note 1) dBm BER < 10 -9 (Note 1) k Vpp differential into 2 x 50 MHz V ps ps dB 600 V kHz AC-coupled outputs (via 22 nF) internally connected to VCC (Q+ + Q-)/2 1.5 App < IIN < 160 App 160 App < IIN < 1.1 mApp f3db Rout VCMOUT tj,P VCC - 0.6 15 45 35 400 500 +4.2 65 Power supply rejection PSSR ratio Bias resistance Bias voltage Low frequency cutoff f < 10 MHz (Note 2) RBIAS VBIAS f3db, low Note: 1) Data rate: 622 Mbit/s; data sequence: PRBS 2 23-1 2) Generated noise on power supply: sine curve, 100 mV pp (see application note b) Semiconductor Group 4 July 1998 FOA1061A1 FOA1062A1 Package information P-TSSOP-16-1 VCC GND GND IN FILTER GND GND NC 1 2 16 15 NC GND GND QQ+ GND GND MONITOR 3 4 5 6 7 8 FOA1061A1 14 13 12 11 10 9 NC: not connected Figure 2 Package pinning. bare die GND GND GND GND GND VCC NC Size: 1,31 * 1,00 mm2 IN FOA1062A1 GND GND QGND Q+ GND FILTER GND NC GND GND GND GND NC: not connected Figure 3 Pad assignment. Semiconductor Group 5 GND July 1998 FOA1061A1 FOA1062A1 Eye-diagrams measured at data rates of 622 Mbit/s ext. modulator EDFA optical out: -2 dBm Attenuator Q+ IN FOA1062 (DUT) el.* Q- TEK CSA803A opt.** monitor out: -8 dBm Bit pattern generator * electrical input: sampling head SD26, bandwidth 20 GHz, risetime < 17.5 ps ** optical input: O/E-converter head SD26, bandwidth 20 GHz, opt. pulse response speed (FWHM) < 28.5 ps Figure 4 Measurement set-up. Figure 5 Eye diagrams at input power -20 dBm (top) and -30 dBm (bottom). 6 July 1998 Semiconductor Group FOA1061A1 FOA1062A1 Application notes a) General information * The output pins Q+ and Q- must be terminated equally to prevent instabilities. * It is recommended to minimize stray capacitance when connecting photodiode to transimpedance amplifier. * To improve power supply rejection ratio (PSRR), V CC should be supplied via resistor (4.7 ), capacitor (100 nF) to GND, and inductor (BLM11A601, Murata) to VCC-pin. * The monitor pin (not used in these application notes) must be left open or connected to VCC via resistor of 0 ... 2 k. b) L* 4.7 VCC 100 nF GND VCC PINDiode FILTER Q+ FOA1061/2 22 nF Q+ IN GND Q- Q22 nF *) BLM11A601, Murata Figure 6 Application using PIN-photodiode. c) L* 4.7 VCC 100 nF VAPD x k FILTER x nF IN GND VCC GND Q+ FOA1061/2 Q- 22 nF Q+ Q22 nF APD-Diode *) BLM11A601, Murata Figure 7 Application using APD-photodiode. Semiconductor Group 7 July 1998 FOA1061A1 FOA1062A1 c) Vcc TO-can PIN-Diode Note: no external components needed OUT + NC GND GND GND GND GND FOA1062 GND GND GND GND GND OUT- FILTER Q+ GND GND GND GND GND VCC IN Q- NC Figure 8 Application example of FOA1062 mounted in TO-can. Package outline of P-TSSOP-16-1 (Plastic Thin Shrink Small Outline) Sorts of Packing For more information on package outlines for tubes, trays, etc. see our Data Book "Package Information" (Ordering No. B192-H663-7400). Dimensions in mm SMD = Surface Mounted Device Semiconductor Group 8 July 1998 |
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